View APTGF90DDA60T3G_4572196.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGF90DDA60T3G
Dual Boost chopper NPT IGBT Power Module
13 14
VCES = 600V IC = 90A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS compliant
CR1
CR2
22 23 Q1 26 27
7 8 Q2 4 3
29 15
30
31 R1
32 16
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 600 110 90 200 20 416 200A @ 600V Unit V A V W
April, 2009 1-5 APTGF90DDA60T3G - Rev 0
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGF90DDA60T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 100A Tj = 125C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Min Typ 2 2.2 5.5 Max 250 2.5 6.5 400 Unit A V V nA
4.5
Dynamic Characteristics
Symbol Characteristic Cies Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V ; VCE = 25V f = 1MHz VGE= 15V ; VCE=300V IC=100A Inductive Switching (25C) VGE = 15V VBus = 300V IC = 100A RG = 2.2 Inductive Switching (125C) VGE = 15V VBus = 300V IC = 100A RG = 2.2 VGE = 15V Tj = 125C VBus = 300V IC = 100A Tj = 125C RG = 2.2 VGE 15V ; VBus = 360V tp 10s ; Tj = 125C Min Typ 4.3 0.4 240 25 10 130 20 25 11 150 30 1 mJ 3 450 A Max Unit nF nC
ns
ns
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt =200A/s
Min 600
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=600V
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
160 220 290 1530
ns nC
www.microsemi.com
2-5
APTGF90DDA60T3G - Rev 0
April, 2009
Tj = 125C
100 1.6 2 1.3
2 V
APTGF90DDA60T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 exp B25 / 85 T - T 25
T: Thermistor temperature 1 RT: Thermistor value at T
Min
Typ 50 5 3952 4
Max
Unit k % K %
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.3 0.55 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGF90DDA60T3G - Rev 0
April, 2009
17
28
APTGF90DDA60T3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 200 175 150 IC (A)
TJ=125C TJ = 125C VGE=15V VGE=12V
200 160
IC (A)
TJ=25C
VGE=20V
120 80 40 0 0 0.5 1 1.5 2 VCE (V) 2.5
125 100 75 50 25 0
VGE=9V
3
3.5
0
1
2
3 VCE (V)
4
5
200 175 150
Transfert Characteristics 5 4 E (mJ) 3 2 1 0 5 6 7 8 9 10 11 12 0
Energy losses vs Collector Current
VCE = 300V VGE = 15V RG = 2.2 TJ = 125C
Eoff
125 IC (A) 100 75 50 25 0 VGE (V) Switching Energy Losses vs Gate Resistance 3.5 3 2.5 E (mJ)
Eoff
TJ=125C TJ=25C
Eon
25
50
75
100 125 150 175 200 IC (A)
250 200 IC (A) 150 100
Eon
Reverse Safe Operating Area
2 1.5 1 0.5 0 0 2 4 6 8 Gate Resistance (ohms) 10
VCE = 300V ; VGE =15V IC = 100A ; TJ = 125C
50 0 0
VGE=15V TJ=125C RG=2.2
100
200
300 VCE (V)
400
500
600
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.9
0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0 0.00001
www.microsemi.com
4-5
APTGF90DDA60T3G - Rev 0
April, 2009
0.7
IGBT
APTGF90DDA60T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 250 200 150
ZCS VCE=300V D=50% RG=2.2 TJ=125C TC=75C
Forward Characteristic of diode 200
150
TJ=125C
IF (A)
100
TJ=25C
100 50 0 0 25 50 75 IC (A) 100 125 150
hard switching ZVS
50
0 0 0.3 0.6 0.9 1.2 VF (V) 1.5 1.8 2.1
0.6 Thermal Impedance (C/W) 0.5 0.4 0.3 0.2 0.1 0.9 0.7 0.5 0.3 0.1 0.05
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Diode
Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
0 0.00001
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGF90DDA60T3G - Rev 0
April, 2009

▲Up To Search▲

Price & Availability of APTGF90DDA60T3G

	To Download APTGF90DDA60T3G Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .